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| savantic semiconductor product specification silicon npn power transistors 2N6216 2n6217 description with to-3 package high current ,high power dissipation applications for use in switching and linear power applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2N6216 200 v cbo collector-base voltage 2n6217 open emitter 180 v 2N6216 150 v ceo collector-emitter voltage 2n6217 open base 140 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a p d total power dissipation t c =100 71 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.46 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N6216 2n6217 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N6216 150 v ceo(sus) collector-emitter sustaining voltage 2n6217 i c =0.1a ;i b =0 140 v v cesat-1 collector-emitter saturation voltage i c =4a; i b =0.4a 1.2 v v cesat-2 collector-emitter saturation voltage i c =6a; i b =0.75a 1.6 v v besat base-emitter saturation voltage i c =6a; i b =0.75a 2.0 v 2N6216 v ce =80v; i b =0 i ceo collector cut-off current 2n6217 v ce =70v; i b =0 5.0 ma i cbo collector cut-off current v cb =ratedv cbo ; i e =0 1.0 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe dc current gain i c =5a ; v ce =5v 20 80 f t transition frequency i c =1a ; v ce =10v 20 mhz savantic semiconductor product specification 3 silicon npn power transistors 2N6216 2n6217 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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